8 years ago

As semiconductor device and circuit engineers we traditionally think of band edges and effective masses as fixed fundamental material parameters. However, at nanometer device lengths these two parameters can be

Flexible electronics has an exciting potential for enabling bendable, rollable and foldable displays, smart product labeling as well as various applications in wearable, healthcare and medical electronics. The circuit design

8 years ago

LEARN ABOUT MIPI I3C ALLIANCE STANDARD This webinar will provide a discussion of a new a standard from the MIPI Alliance – I3C. It unifies and extends the legacy interfaces

8 years ago

As process nodes continue to shrink, the requirement for additional physics is gradually creeping into each stage of the design process. By way of illustration, TCAD simulations are becoming more

8 years ago

The previously standalone Stellar GUI based field solver tool for parasitic extraction is now integrated into Hipex (Silvaco’s full chip extraction tool) in Expert GUI. In Hipex, user can choose

8 years ago

We have demonstrated in previous articles the static electrical and optical simulation of LC cells [1][2]. The last piece of the function for a comprehensive analysis of an LC pixel

8 years ago

OBJECTIVE Add an impurity (H) to a material (silicon) for a diffusion model (Fermi). The description below refers to Victory Process version 7.27.X.

8 years ago

With each new semiconductor process node, process variation, both global and local, play an increasingly significant role in determining Memory performance. When combined with supply voltage and temperature variation, traditional

8 years ago

This webinar will provide a discussion about new features of Silvaco’s Layout Editor tool (Expert) for improving design productivity on FPD layout.

This webinar will present a model parameter extraction methodology for GaN HEMT devices. This will include a review of the current SPICE compact models for GaN HEMT devices, with a

This webinar will present an efficient methodology for migrating and optimizing standard cell libraries. Foundation IP reuse through migration between non-disruptive technology nodes can save a lot of engineering resources

8 years ago

One of wide bandgap semiconductors, SiC has been widely applied to the power devices, and then, the super-junction MOS transistor of SiC is being investigated to obtain higher performance for