Victory Process
Victory Process: 2D and 3D semiconductor process simulation
Simulate every implant, diffusion, oxidation, deposition and etch step from your GDSII layout, and hand your device simulation a finished 1D, 2D or 3D structure.
What Victory Process does
Victory Process is a process simulator for 2D and 3D work, driven by your layout. It works out what implantation, diffusion, oxidation, deposition and etch do to a semiconductor structure, one step at a time. The learning happens in process simulation, not on test wafers. Adjust a dose or an etch time and you see the resulting structure before you commit a wafer, not when the lot comes back from the fab. Own process integration? That’s where you learn how much one step’s variation matters, before yield tells you.
What you can model
Simulation modes
The move between 1D, 2D and 3D happens automatically. Mask-based simulation reads your GDSII layout directly. What you simulate comes from your real masks, not a cross-section someone drew by hand. Multi-threaded.
Ion implantation
Analytical mode runs experimentally verified Pearson and double-Pearson models, and accepts your own user-defined moments. Monte Carlo mode rests on the Binary Collision Approximation, with universal tilt and rotation, in crystalline or amorphous material. Empirical models handle implant damage.
Diffusion and activation
Impurities diffuse through multi-material structures in 1D, 2D and 3D. You choose the model the problem calls for: Fick, Fermi, Fully Coupled, Five-stream, Single-pair, or grain-based for polysilicon. Transient activation, point-defect trapping and clustering run coupled with oxidation-enhanced diffusion.
Oxidation, deposition and etch
Oxidation runs analytically, empirically via the Massoud model, or fully physically — solving oxygen transport and material flow numerically, with stress, ambient composition, crystal orientation and doping all affecting the rate. Silicon and silicon carbide are calibrated, and there is no restriction on which materials can be oxidised.
Deposition and etch each offer a fast geometrical model for prototyping a structure and full physical models when the shape has to come out of the process: conformal, non-conformal and directional deposition with shading and visibility, ion beam deposition, wet and dry etch with selectivity, ion-enhanced chemical etch and ion milling.
Photolithography and stress
Lithography is modelled from the same GDSII layout: two-dimensional aerial image formation at large numerical aperture, with extensive source and pupil plane filtering, and full phase-shift and transmittance-variation masks.
Stress accumulates the way it does on a wafer — thermal mismatch between layers, local lattice mismatch at interfaces, initial deposit stress, hydrostatic stress from capping layers, and whatever the previous step left behind. Crystalline materials including silicon, SiGe and GaAs are treated anisotropically, accounting for wafer orientation.
Extensibility
If your process depends on physics Victory Process doesn’t ship, add it through the Open Model Interface. New materials and their parameters go into the Open Material Database. You extend the tool rather than wait for a release.
Where Victory Process sits in the TCAD flow
Your GDSII layout goes in. The structure Victory Process builds goes on to four tools.
Fab and process engineers without a TCAD specialist on hand reach the same physics through FTCO.
Takes in
Your layout
GDSII, imported directly
Simulates electrical behavior
Extracts 3D RC parasitics
Runs design-of-experiments sweeps
Applications, by device family
Optical and photonics
CMOS image sensors, solar cells, lasers, waveguides and modulators
New to Victory Process, or already running it
Evaluating it
Bring the device you're actually trying to make: its layer stack, its node, the step that won't match silicon. An application engineer sets Victory Process up on your case, so what you see is your structure, not a prepared example.
Running it
Installers, manuals and release notes are in Support and Downloads.
Stuck on something
Open a case in the support portal and track it until it's closed. Portal access comes with a current maintenance contract.
Questions about Victory Process
What does Victory Process simulate?
Each fabrication step that builds a device, from ion implantation and dopant diffusion and activation through oxidation, deposition and etch. You work in 1D, 2D or 3D from your GDSII layout. The output is a structure file for Victory Device to simulate electrically, often after Victory Mesh has refined the mesh.
What is the difference between process emulation and process simulation?
Emulation reproduces a structure's shape from geometric rules, which is enough when all you need is the geometry. Simulation works the shape out from the physics instead: how dopants implant and diffuse, how oxide grows, how material deposits and etches. Victory Process simulates; for process emulation, see the TCAD family page.
Can Victory Process import GDSII layouts directly?
Yes, through mask-based simulation that reads GDSII directly, so the structure you simulate comes from the mask set you're actually using. When the layout changes, the structure changes with it; there's no cross-section to redraw by hand. That direct import is what makes Victory Process layout-driven.
Which implantation and diffusion models are included?
Analytical implantation rests on experimentally verified Pearson and double-Pearson models, and you can supply your own moments. Monte Carlo implantation runs on the Binary Collision Approximation, handling crystalline and amorphous materials with universal tilt and rotation. For diffusion, choose Fick, Fermi, Fully Coupled, Five-stream, Single-pair or grain-based polysilicon.
How does Victory Process hand off to device simulation?
It writes a structure file, and Victory Device reads it. Victory Mesh can refine the mesh in between. The same structure goes to Victory RCx for 3D RC extraction, and when you're sweeping a design of experiments, Victory DoE runs the whole sequence.
