• Webinars

TCAD-based Model Extraction Flow for GaN HEMT Devices

This webinar will present a model parameter extraction methodology for GaN HEMT devices. This will include a review of the current SPICE compact models for GaN HEMT devices, with a discussion of Verilog-A and simulator built-in models. The input data for the model extraction is generated using TCAD device simulations. Specific advantages of this approach will be discussed, such as the ability to generate data in the absence and presence of self-heating. A SPICE model extraction flow will be illustrated. Various details will be addressed: how to deal with symmetric vs. asymmetric devices, how to set the device structure-related model parameters and how to setup various optimization steps.

What attendees will learn:

  • Current status of SPICE compact models for GaN devices
  • Verilog-A versus simulator built-in models
  • Generating data using TCAD device simulation
  • Data conversion for parameter extraction
  • Extraction of SPICE model parameters for GaN HEMT devices
    • Prerequisites
    • Description of the flow
    • Setting up the optimization steps
    • Running the flow and illustrating the results


Dr. Bogdan Tudor is Head of Silvaco’s Device Characterization Group. He is responsible for all aspects of the Device Characterization Group’s activities, including R&D, field operations and modeling services. He joined Silvaco in 2017. Prior to joining Silvaco, Dr. Tudor has been a Principal Software Architect at ProPlus Design Solutions for 4 years and before that he was a Senior R&D Engineer with Synopsys for 12 years. Dr. Tudor has an extensive expertise in Device characterization, Compact Model development, MOSFET Aging Reliability Analysis and Software development.

Dr. Tudor holds a MS in Electrical Engineering and a Ph.D. in Microelectronics from the Polytechnic University in Bucharest, Romania.

When: July 19, 2018
Where: Online
Time: 10:00am-11:00am-(PST)
Language: English


Academics, engineers, and management who are interested in the modeling and characterization of GaN HEMT devices.