Yearly Archives: 2000
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2000
Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.
26 years ago
BSIM4_U ( BSIM4 Universal Routine )
This routine is a multitarget/geometry routine used to extract all kind of characteristics. There is the possibility to trace three different targets. This routine is based on full SMU definition.
26 years ago
Measure CJSWG (CJGATE) Capacitance using UTMOST III
For the UTMOST III versions greater than 17.2.0.R, the UTMOST users can measure the CJSWG (CJGATE) capacitance using the "CJ/CJSW" routine. The CJ/CJSW routine in MOS technology has been modified
26 years ago
Cross-Sectional Viewer in Expert
Cross-Sectional Viewer is a tool within Expert to simulate the cross sectional view of ICs along an arbitrary drawn cut-line on the layout. Cross-sectional Viewer is a link between the
26 years ago
Expert: Recent Improvements in Hierarchical Layout Inspection
The functionality of several features of Expert layout editor has been enhanced to deal with hierarchical layouts in more convenient ways.
26 years ago
Applicability of Distance Computation for Graphs to LVS Discrepancy Analysis
An important step in electronic circuit design is layout versus schematic verification (LVS)
26 years ago
Expert Hints, Tips, and Solutions: Object Scripting, Layer Color Palette, Big Measurements
Q: Often I need to measure big objects. It order to position the ruler precisely I must zoom in at one end, zoom out that zoom again in at the
26 years ago
Yield Analysis and Performance Optimization Using FastBlaze and SPAYN
In previous Simulation Standard articles (Nov 97 & Nov 98) FastBlaze has been presented as a new, highly efficient approach to simulating advanced HEMTs and MESFETs. Conventional device simulators often
26 years ago
New Model for Simulation of Exposure Process in Complex Nonplanar Resist-Substrate Structures
Predictive and efficient lithography simulation is an important component of the semiconductor industry efforts to develop the next generation of deep submicron technologies. Emerging technologies are based on elements with
26 years ago
Fast, Physical, Predictive and Calibrated Modeling of Ion Implantation
In a Research & Development environment, Technology Computer Aided Design (TCAD) is involved in the device optimization loop and requires efficient and predictive implantation modeling with frequent updating of the
26 years ago
Can Atlas be used to simulate advanced III-V or II-VI materials?
Yes. ATLAS now supports a wide range of materials in its database. This database covers single element conductors, binary compounds and quaternary compounds. A complete list of all materials can