Simulation Standard

Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.

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4 months ago

TCAD Breakdown Simulation of a 1200 V Vertical GaN FinFET

This paper presents TCAD process, mesh, and device simulations of a 1200 V vertical gallium nitride (GaN) FinFET using Silvaco Victory tools

6 months ago

Accelerating Next-Generation Power Technologies with AI-Powered FTCO

In our latest Simulation Standard we examines how Silvaco’s AI-powered Fab Technology Co-Optimization (FTCO™) platform, combining simulation at scale, smart Design of Experiments (DOE), and machine learning (ML) surrogate models,

7 months ago

Organic Transport Model for Tandem Organic Light-Emitting Diode

Next generation displays are utilizing tandem organic light-emitting diode (OLED) topologies to improve panel performance.

9 months ago

Enabling the Next Generation of High-Voltage Power: Gallium Oxide Trench Schottky Diodes from Simulation to System

β-Ga2O3 is set to revolutionize high-voltage power conversion, with ultra-low losses and a high critical electric field that make it ideal for next-generation power devices, enabling three-phase HVDC AC/DC and

10 months ago

Victory TCAD 2025 Release

With the 2025 release, Silvaco is yet again leading innovation in TCAD, driven by its over 40 years of experience. This release introduces major enhancements across simulation engines, solver performance,

11 months ago

Accelerating Vertical GaN Power Technology Development with Physics-based Digital Twins for 800V DC AI Factory Power Infrastructure

In this paper we will discuss accelerating vertical GaN power technology development with physics-based Digital Twins for 800V DC AI factory power infrastructure.

1 year ago

Dynamic Testing for Power MOSFET

In this paper we demonstrate the application of the Silvaco TCAD suite from the technology process to circuit analysis for a planar SiC MOSFET (DMOS).

1 year ago

The Impedance Field and Small-Signal Noise

This is an introduction to the impedance field method and its application to the calculation of the small-signal noise in Victory Device.

1 year ago

Trajectory Replication in Monte Carlo Ion Implantation with Victory Process

This edition introduces trajectory replication in Victory Process Monte Carlo ion implantation, with a focus on:

  • Reducing computation time by reusing ion paths in similar regions
  • Maintaining physical

1 year ago

Victory Process Stress Simulation: Practical Workflows, Best Practices, and Recent Improvements

In this article, we will present application examples of stress analysis in Victory Process.