Simulation Standard

Silvaco has developed the imagesforvp converter, which transforms SEM and TEM images into a format that can be read by the Victory Process simulator [1]. The convert-ed images can be

2 months ago

Predictive TCAD Modeling of Normally-Off p-GaN HEMTs for Dynamic RDS(on), Leakage, Breakdown, and ML-Based Design Exploration Abstract This article presents a practical simulation workflow for predictive simulation of normally-off p-GaN

3 months ago

Accelerating Manufacturing-Aware Simulations for Photonic Integrated Circuits with FTCO™ and Digital Twins Abstract Photonic integrated circuit (PIC) performance is increasingly bounded by fabrication realities such as sidewall angle, critical-dimension bias,

4 months ago

This paper presents TCAD process, mesh, and device simulations of a 1200 V vertical gallium nitride (GaN) FinFET using Silvaco Victory tools

6 months ago

In our latest Simulation Standard we examines how Silvaco’s AI-powered Fab Technology Co-Optimization (FTCO™) platform, combining simulation at scale, smart Design of Experiments (DOE), and machine learning (ML) surrogate models,

8 months ago

Next generation displays are utilizing tandem organic light-emitting diode (OLED) topologies to improve panel performance.

10 months ago

β-Ga2O3 is set to revolutionize high-voltage power conversion, with ultra-low losses and a high critical electric field that make it ideal for next-generation power devices, enabling three-phase HVDC AC/DC and

11 months ago

With the 2025 release, Silvaco is yet again leading innovation in TCAD, driven by its over 40 years of experience. This release introduces major enhancements across simulation engines, solver performance,

12 months ago

In this paper we will discuss accelerating vertical GaN power technology development with physics-based Digital Twins for 800V DC AI factory power infrastructure.

1 year ago

In this paper we demonstrate the application of the Silvaco TCAD suite from the technology process to circuit analysis for a planar SiC MOSFET (DMOS).

1 year ago

This is an introduction to the impedance field method and its application to the calculation of the small-signal noise in Victory Device.

1 year ago

This edition introduces trajectory replication in Victory Process Monte Carlo ion implantation, with a focus on:

  • Reducing computation time by reusing ion paths in similar regions
  • Maintaining physical