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Simulation Standard
Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.
3 years ago
2023 TCAD Baseline Release
New Features in the 2023 Baseline Release:
- Section 1: Process Simulation – New Features in 2023 Baseline Release
- Section 2: Device Simulation – New Features in 2023 Baseline Release
3 years ago
Simulation Framework for Device-packaging Co-design for Power Electronics
The past several years has seen a fast deployment of wide-bandgap power devices in fast chargers, electric vehicles, data centers and renewable energy processing. The performance of power devices is
4 years ago
Understanding of Geometrical Boundary Conditions in Victory Process
It is common to run the process simulation for the part of a larger structure just to reduce the computation time. To account for the influence of parts of the
4 years ago
Automatic Grid Refinement for Thin Material Layer Etching in Process TCAD Simulations
The utilization of thin material layers is common in modern semiconductor device fabrication. Subsequent etching steps require an accurate modeling of these thin layers. Although level-set based process TCAD simulations
4 years ago
How to Search, View and Use Default Parameters from the Silvaco Material DataBase SMDB with DeckBuild
Silver, DeckBuild’s material database viewer, can be used to examine the default parameters in the Silvaco Material DataBase (SMDB) and to generate MATERIAL commands for Victory Process and Victory Device.
4 years ago
3D TCAD Simulation of Gallium Nitride Tri-gate Junction HEMT
The GaN high electron mobility transistor (HEMT) has been commercialized as a power device with performance superior to Si devices in the voltage classes from 15 V to 900 V
4 years ago
Writing an Impurity Activation Model with the Open Model Library
Accuracy of Impurity Activation is essential in correctly modeling and simulating Silicon Carbide devices. For high concentrations of dopants, it is well known that less than 100% of dopants will
4 years ago
User Probes and Arbitrary Parameter Sweeps in Victory Device
One of the new features in Victory Device is the ability to add user managed parameters to a log file. This can be used when sweeping parameters (manually or in
4 years ago
Quantum Transport Simulation at Atomistic Accuracy of a Nanowire FET
The FET physical dimensions continue to shrink to five nm node and below, characterized by new types of architectures with nanosheet (NS) and nanowire (NW) shapes [3]. The present choice
4 years ago
2022 TCAD Baseline Release
New Features in the 2022 Baseline Release:
- Section 1: Process Simulation – New Features in 2022 Baseline Release
- Section 2: Device Simulation – New Features in 2022 Baseline Release