Simulation Standard

Victory Process (VP) uses two types of mesh to represent the structure: • The geometry mesh, which is used to represent the material regions. • The volume mesh, which is

Unlike conventional ohmic contact thin-film transistors (TFTs), contact-controlled TFTs [1], [2] rely on source energy barriers to produce a range of benefits including: low saturation voltages; extremely high intrinsic gain;

In this article, the operation of avalanche photo-diodes in the medium gain, continuous operation mode is investigated. In other words, we are not considering diode operation in transient “Gieger” or

Victory Mesh versions 1.7.2.C and later include two new commands that can be used for complex shape genera-tion. The path and follow commands can be used together to generate surface

We detect a local maximum in the design space of a pseudomorphic-channel high electron mobility transistor (PHEMT). The design has an OIP3 linearity figure-of-merit that is 10-15 dBm above the

Gallium Nitride (GaN) based devices such as the High Electron Mobility Transistors (HEMTs) find wide applications in RF and Power domain due to its excellent intrinsic properties. Accordingly, such devices

In this paper the critical design features of a SiC superjunction trench MOS device were optimized using CAD to obtain a high breakdown voltage while minimizing any unnecessary increase in

Conductive Bridge Random Access Memory (CBRAM) is a non-volatile memory device technology that can operate by consuming very low power. Another advantage of the CBRAM devices is its ability to

The qualification of GaN power high-electron-mobilitytransistors (HEMTs) must consider the device ruggedness against out-of-SOA (safe operating area) events [1- 3].