Simulation Standard

This work reports on the design of a high efficiency InGaN-based two junction (2J) tandem solar cell via numerical simulation, operating at high temperatures (450o C) and under 200 suns

Self-heating effect may cause over-heated damage and degradation for silicon-on-insulator (SOI) devices, so numerical counting heat generated, and distribution can optimize the radio frequency integrated circuits (RFICs) applications. Both conventional

Victory Mesh support for line statements lets the user customize the volume mesh used by conformal remesh schemes. The volume mesh data inherited from Victory Process can be replaced with

The flat panel display industry has been growing rapidly for recent years in mobile display, car display, AR/VR applications, and large-scale TVs display. The core technology enabling these applications is

Platinum and gold are widely used as an effective method to control lifetime in silicon-based devices [1, 2, 3]. Platinum and gold are introduced as recombination centers to improve switching

Introduction Super-junction based devices are a key enabling technology for power devices. Adjacent columns of p and n-type doped material with optimized doping levels enables box-like electric fields, maximizing the

Abstract— Silvaco TCAD simulations are employed to identify relevant current carrying mechanisms in amorphous selenium (a-Se) based detectors, using parameters obtained from experimental data, density functional theory calculations, and in-house

Abstract— A Singular Point Source MOS (S-MOS) cell concept suitable for power MOS based devices is presented. The S-MOS differs from a standard Planar or Trench MOS cell in the

Abstract—During the last few years, oxide-based ReRAM technology has attracted intense industrial and scientific research interest. Therefore, we have performed an in-depth computational study with a focus on data retention

New Features in 2021 Baseline Release:

1. Section 1: Process Simulation
2. Section 2: Device Simulation
3. Section 3: Victory Mesh
4. Section 4: Parasitic Extraction