FastBlaze is an ultra-fast physical MESFET and HEMT simulator which incorporates advanced physical models. By designing the simulator and its framework specifically for these devices, Silvaco has optimized device simulation

For high temperature, high power applications Silicon Carbide (SiC) continues to be a useful material for device fabrication because of its wide band gap, high breakdown field, and high thermal

The Monte Carlo Binary Collision Algorithm (BCA) implant module in ATHENA was introduced in an earlier article [Simulation Standard Vol 10, #5, May 1999] which discussed the accuracy of the

A. UTMOST III SOI module has three routines for characterization of the parasitic BJTs of SOI devices. These routines are "IC/VCE", "Gummel" and "INT_BJT" All routines require to have 5

The latest VBIC bipolar model v1.2 of Sep 24 1999 has been integrated into SmartSpice and UTMOST III. It can be invoked by specifying the model selector LEVEL=5 and the

A novel extraction method of high frequency small-signal model parameters for MOSFET is proposed. From S-parameter measurement, this technique accurately extracts the MOSFET model parameters including the charge conservation capacitance