Yield Analysis and Performance Optimization Using FastBlaze and SPAYN


In previous Simulation Standard articles (Nov 97 & Nov 98) FastBlaze has been presented as a new, highly efficient approach to simulating advanced HEMTs and MESFETs.

Conventional device simulators often suffer from slow execution times, leading to a trade off between mesh density and physical model complexity against CPU run time and convergence. This requires engineers to compromise accuracy to achieve a reasonable throughput.

By focusing solely upon FET simulation, FastBlaze has been able to greatly optimize the physical solution procedure, enabling the use of the most sophisticated physical models while maintaining a fast execution (typically less than 1 minute for a full set of DC ID-VDS curves) This speed enables both complex and extensive experimental designs to be completed on a reasonable time scale, permitting experiments that would be prohibitively expensive for more traditional device simulators.