8 years ago
Circuit Simulation is one of the most critical parts of the design process. Validating circuit behavior is essential to saving cost, minimize turn-around times and establishing reliable system characteristics before
8 years ago
This webinar represents a continuation of a previously presented parameter extraction methodology for GaN HEMT devices. This will include generating I-V and C-V data through TCAD device simulations. Asymmetric vs.
8 years ago
Flexible electronics has an exciting potential for enabling bendable, rollable and foldable displays, smart product labeling as well as various applications in wearable, healthcare and medical electronics. The circuit design
8 years ago
With each new semiconductor process node, process variation, both global and local, play an increasingly significant role in determining Memory performance. When combined with supply voltage and temperature variation, traditional
8 years ago
This webinar will present a model parameter extraction methodology for GaN HEMT devices. This will include a review of the current SPICE compact models for GaN HEMT devices, with a
9 years ago
With each new semiconductor process node, process variation, both global and local, play an increasingly significant role in determining standard cell library performance. When combined with supply voltage and temperature
10 years ago
The impact of variation on analog design has become critical with the advanced nodes technology. The regular Monte Carlo approach for statistical analysis has reached its limit and can no
11 years ago
Designers’ characterization and verification tasks have become more critical due to scaled down process technologies such as FinFET or FDSOI, and the drive towards lower Vdd/Vth processes. As a result,
11 years ago
In this webinar a review of the TCAD-to-SPICE simulation flow of solar cells and solar panels and its related methodology will be presented. An argument for physical TCAD simulations as
12 years ago
This webinar will provide a comprehensive overview of model parameter extraction for high voltage devices, using the industry standard HiSIM_HV 2 model. HiSIM_HV 2 model parameter effects will be explained
13 years ago
This webinar will provide a discussion of the methods used to design, simulate and optimize the performance of power devices using TCAD and SPICE simulations. Silicon has long been the
28 years ago
CLEVER can perform accurate field solver extractions of resistance and capacitance from 3D structures generated from realistic process simulation. Comparison of CLEVER results with measurements made by SGS-Thomson Microelectronics were