TCAD to SPICE Simulation of SiC and Si Power Devices – Archive
This webinar will provide a discussion of the methods used to design, simulate and optimize the performance of power devices using TCAD and SPICE simulations. Silicon has long been the semiconductor of choice for high-voltage power electronics applications. However, wide-bandgap semiconductors such as SiC have begun to attract attention due to their projected improved performance over silicon. Simulating SiC devices is more challenging relative to silicon-based devices. In this webinar we will review the requirements to accurately simulate SiC-based power devices. We will also present a completely automated TCAD to SPICE flow that helps reduce the cost and time taken to develop a Silicon-based IGBT power device.
WHAT ATTENDEES WILL LEARN:
- Key challenges of power device TCAD simulation
- Key challenges of SiC TCAD simulation
- TCAD simulation of SiC IGBT, Trench MOS and DMOS
- 2D and 3D TCAD simulations (meshing, solver, physical models)
- When to use 3D over 2D
- Full TCAD to SPICE IGBT flow example
- Process and Device simulations for IV curve generation
- TCAD-based SPICE parameter extraction using HiSIM-IGBT compact model
- Correlation between circuit performance and process variation
- Circuit performance optimization
Dr. Eric Guichard is Vice President of the TCAD Division. He is responsible for all aspects of the TCAD division from R&D to field operations. Since joining Silvaco in 1995, he has held numerous positions including director of Silvaco France and most recently Director of Worldwide TCAD Field Operations. Prior to joining Silvaco, Dr. Guichard was a senior SOI engineer specialized in aging of transistors and circuits at LETI and Thomson Military and Space.
Dr. Guichard holds an MS in material science and a Ph.D in semiconductor physics from Ecole Nationale Polytechnique de Grenoble, France.
When: December 6, 2014
Time: 10:00am-11:00am – (PST)
WHO SHOULD ATTEND:
Academics, engineers and management looking for solutions to design and optimize SiC and Silicon-based power devices.