Monthly Archives: July 2018
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July 2018
Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.
8 years ago
TCAD-based Model Extraction Flow for GaN HEMT Devices – Part 1
TCAD-based Model Extraction Flow for GaN HEMT Devices This webinar will present a model parameter extraction methodology for GaN HEMT devices. This will include a review of the current SPICE
8 years ago
Standard Cell Layout Migration and Optimization
Standard Cell Layout Migration and Optimization This webinar will present an efficient methodology for migrating and optimizing standard cell libraries. Foundation IP reuse through migration between non-disruptive technology nodes can
8 years ago
3D Topography Simulation of SiC Epitaxial Growth Modeled by Diffusive Flux and Gibbs-Thomson Effect
One of wide bandgap semiconductors, SiC has been widely applied to the power devices, and then, the super-junction MOS transistor of SiC is being investigated to obtain higher performance for
8 years ago
An Empirical Composition Dependent Model of Dopant Diffusion Coefficients in Si, Si1-x Gex and Ge Material Systems
Previously published fast empirical models for diffusion coefficients in silicon-germanium (Si1-x Gex) [1][2] were not applicable to high germanium content x≥0.5 and hence did not properly extend towards germanium. For
8 years ago
TCAD Simulation of Leakage Through Threading Dislocations in GaN-based pn-diodes
Gallium nitride (GaN)-based devices for power electronics show superior performance in comparison to silicon carbide and silicon-based devices [1]–[3]. The development of vertical devices, like pn-diodes and power HEMTs results
8 years ago
Hints, Tips and Solutions – DeckBuild Remote VM Setup
This document describes how to setup a virtual environment suitable for the deckbuild remote mode. The host system to consider shall be Windows (7 or 10). The goal is to