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July 2018

Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.

GaN HEMT 소자에 대한 TCAD 기반 모델 추출 플로우 – 1부

2018년 7월 20일 | 2:00am-2:30am (한국 시각) GaN HEMT 소자에 대한 모델 파라미터 추출 방법을 제시합니다. Verilog-A 및 시뮬레이터 내장 모델에 대한 논의를 통해, GaN HEMT 소자에 대한 현재의 SPICE

스탠더드 셀 레이아웃의 마이그레이션 및 최적화

스탠더드 셀 레이아웃의 마이그레이션 및 최적화 본 웹 세미나에서는 스탠더드 셀 라이브러리의 마이그레이션 및 최적화에 필요한 효율적인 방법론을 제시합니다. 기술 노드 간 마이그레이션을 통한 Foundation IP의 재사용은 많은 엔지니어링 자원을

8 years ago

3D Topography Simulation of SiC Epitaxial Growth Modeled by Diffusive Flux and Gibbs-Thomson Effect

One of wide bandgap semiconductors, SiC has been widely applied to the power devices, and then, the super-junction MOS transistor of SiC is being investigated to obtain higher performance for

8 years ago

An Empirical Composition Dependent Model of Dopant Diffusion Coefficients in Si, Si1-x Gex and Ge Material Systems

Previously published fast empirical models for diffusion coefficients in silicon-germanium (Si1-x Gex) [1][2] were not applicable to high germanium content x≥0.5 and hence did not properly extend towards germanium. For

8 years ago

TCAD Simulation of Leakage Through Threading Dislocations in GaN-based pn-diodes

Gallium nitride (GaN)-based devices for power electronics show superior performance in comparison to silicon carbide and silicon-based devices [1]–[3]. The development of vertical devices, like pn-diodes and power HEMTs results

8 years ago

Hints, Tips and Solutions – DeckBuild Remote VM Setup

This document describes how to setup a virtual environment suitable for the deckbuild remote mode. The host system to consider shall be Windows (7 or 10). The goal is to