8 years ago
本ウェビナーでは、GaN HEMTデバイスのモデル・パラメータ抽出メソドロジをご紹介します。
8 years ago
本ウェビナーでは、スタンダード・セル・ライブラリのマイグレーションと最適化を効率的に行う方法を説明します。
8 years ago
One of wide bandgap semiconductors, SiC has been widely applied to the power devices, and then, the super-junction MOS transistor of SiC is being investigated to obtain higher performance for
8 years ago
Previously published fast empirical models for diffusion coefficients in silicon-germanium (Si1-x Gex) [1][2] were not applicable to high germanium content x≥0.5 and hence did not properly extend towards germanium. For
8 years ago
Gallium nitride (GaN)-based devices for power electronics show superior performance in comparison to silicon carbide and silicon-based devices [1]–[3]. The development of vertical devices, like pn-diodes and power HEMTs results
8 years ago
This document describes how to setup a virtual environment suitable for the deckbuild remote mode. The host system to consider shall be Windows (7 or 10). The goal is to