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2018

Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.

8 years ago

How FPD Designers Can Improve Productivity

This webinar will provide a discussion about new features of Silvaco’s Layout Editor tool (Expert) for improving design productivity on FPD layout.

TCAD-based Model Extraction Flow for GaN HEMT Devices – Part 1

TCAD-based Model Extraction Flow for GaN HEMT Devices This webinar will present a model parameter extraction methodology for GaN HEMT devices. This will include a review of the current SPICE

Standard Cell Layout Migration and Optimization

Standard Cell Layout Migration and Optimization This webinar will present an efficient methodology for migrating and optimizing standard cell libraries. Foundation IP reuse through migration between non-disruptive technology nodes can

8 years ago

3D Topography Simulation of SiC Epitaxial Growth Modeled by Diffusive Flux and Gibbs-Thomson Effect

One of wide bandgap semiconductors, SiC has been widely applied to the power devices, and then, the super-junction MOS transistor of SiC is being investigated to obtain higher performance for

8 years ago

An Empirical Composition Dependent Model of Dopant Diffusion Coefficients in Si, Si1-x Gex and Ge Material Systems

Previously published fast empirical models for diffusion coefficients in silicon-germanium (Si1-x Gex) [1][2] were not applicable to high germanium content x≥0.5 and hence did not properly extend towards germanium. For

8 years ago

TCAD Simulation of Leakage Through Threading Dislocations in GaN-based pn-diodes

Gallium nitride (GaN)-based devices for power electronics show superior performance in comparison to silicon carbide and silicon-based devices [1]–[3]. The development of vertical devices, like pn-diodes and power HEMTs results

8 years ago

Hints, Tips and Solutions – DeckBuild Remote VM Setup

This document describes how to setup a virtual environment suitable for the deckbuild remote mode. The host system to consider shall be Windows (7 or 10). The goal is to

Introduction to TCAD – Device Theory Put into Practice

Introduction to TCAD – Device Theory Put into Practice TCAD process and device simulation is a powerful 2D and 3D modeling tool used widely by engineers to explore the manufacturing,

8 years ago

Exploration and Comparison of Various Parasitic Solutions and Parasitic-centric Calculations

Exploration and comparison of various parasitic solutions and parasitic-centric calculations This webinar will provide an overview on methods and tools to review parasitic extractor results and to perform a number

8 years ago

Bringing IP Management to the Enterprise Level

Bringing IP Management to the Enterprise Level IP reuse is no longer a new thing—it is the lifeblood of any semiconductor company, especially companies building SoC devices. A typical large