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January 2021

Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.

Silvaco Acquires Physical Verification Solution Provider POLYTEDA CLOUD LLC

January 21, 2021

6 years ago

Accelerating Wireless IOT SoC Implementation with Silvaco AMBA® Subsystem IP

January 28, 2021 | 10:00 am – 10:30 am (PST) In this webinar you will learn how Rafael Microelectronics has deployed Silvaco’s AMBA subsystem in their latest IOT design. Rafael

6 years ago

How to Design Wide Band-Gap Power Devices using Silvaco TCAD Solution

February 11, 2021 | 10:00 am – 10:20 am (PST) This webinar will provide an overview of the design of wide bandgap (WBG) and ultra-WBG power devices.

6 years ago

How To Remesh with Victory Mesh for an Optimized TCAD Device Simulation

February 18, 2021 | 10:00 am – 11:00 am (PST) In this webinar, the attendees will learn the basics of Victory Mesh, how to remesh a structure generated from Victory

6 years ago

How to Design Ultra-low Power Embedded Memories with Silvaco Memory Compilers

February 23, 2021 | 10:00 am – 10:30 am (PST) This webinar presents Silvaco’s Embedded Memory offerings as part of a complete Foundation IP suite that includes Standard Cells and

Learn How Silvaco’s SmartSpice is Getting Faster

March 4, 2021 | 10:00 am – 10:20 am (PST) In this Webinar, we present (1) a general overview of SmartSpice, our SPICE simulation tool; (2) what is new on

How to Quickly Achieve Accurate SPICE Models with Utmost IV

March 16, 2021 | 10:00 am – 10:20 am (PST) This webinar will review the various Silvaco SPICE modeling solutions. This includes a brief overview of our tools, Utmost IV

6 years ago

How to Simulate Semiconductor Materials Stress and Deformation with Silvaco Victory TCAD Solution

March 18, 2021 | 10:00 am – 10:30 am (PST) In this webinar we will cover the capabilities and usage of Victory TCAD Process simulator and explain how materials and

6 years ago

Etching & Deposition Software Engineer

Location: United Kingdom, Grenoble France, Vienna Austria, Germany, Boston, MA, Duluth, GA, and Santa Clara, CA. As a member of the TCAD group, you will design, implement, evaluate, and improve

6 years ago

TCAD Investigation of Total Ionizing Dose (TID) Effects on Gallium Nitride HEMTs

Gallium Nitride (GaN) based devices such as the High Electron Mobility Transistors (HEMTs) find wide applications in RF and Power domain due to its excellent intrinsic properties. Accordingly, such devices