Abstract— Silvaco TCAD simulations are employed to identify relevant current carrying mechanisms in amorphous selenium (a-Se) based detectors, using parameters obtained from experimental data, density functional theory calculations, and in-house

Abstract— A Singular Point Source MOS (S-MOS) cell concept suitable for power MOS based devices is presented. The S-MOS differs from a standard Planar or Trench MOS cell in the

Abstract— A Singular Point Source MOS (S-MOS) cell concept suitable for power MOS based devices is presented. The S-MOS differs from a standard Planar or Trench MOS cell in the

Abstract—During the last few years, oxide-based ReRAM technology has attracted intense industrial and scientific research interest. Therefore, we have performed an in-depth computational study with a focus on data retention

New Features in 2021 Baseline Release:

1. Section 1: Process Simulation
2. Section 2: Device Simulation
3. Section 3: Victory Mesh
4. Section 4: Parasitic Extraction