Cryogenic electronics plays a fundamental role in several applications, such as spacecraft, high-energy physics experiments, metrology, superconductive astronomical detectors and, with the increased interest in quantum computing, the manipulation of

For high performance large area flexible electronics, amorphous metal oxide semiconductor based thin film transistors offer many advantages. These include high mobility, steep sub-threshold and ultralow leakage current, with low

Gallium Nitride High Electron Mobility (GaN HEMT) device technology has gained a lot of traction during the last years. These devices have significant advantages compared to Silicon in user applications

Geometrical module of Victory Process allows the fast and accurate transfer of mask patterns to the structure. However, sometimes it is necessary to emulate the imperfections of physical processes while

Lower conduction loss and fast switching characteristics for power devices are increasingly required in the more and more energy-conscious world. For the low to medium voltage ranges (12 V ~