9 years ago
Gallium Nitride High Electron Mobility (GaN HEMT) device technology has gained a lot of traction during the last years. These devices have significant advantages compared to Silicon in user applications
9 years ago
Geometrical module of Victory Process allows the fast and accurate transfer of mask patterns to the structure. However, sometimes it is necessary to emulate the imperfections of physical processes while
9 years ago
Accurate determination of RC parasitics is a key component in the design and integration of many state of the art semiconductor technologies. Often, the traditional flow of using rule based
9 years ago
With each new semiconductor process node, process variation, both global and local, play an increasingly significant role in determining standard cell library performance. When combined with supply voltage and temperature
9 years ago
This webinar will provide a discussion of Silvaco’s SPI, QSPI, and OSPI IP products and how they are useful in today’s SOCs. SOCs from small IoT devices to large complex
9 years ago
Lower conduction loss and fast switching characteristics for power devices are increasingly required in the more and more energy-conscious world. For the low to medium voltage ranges (12 V ~
9 years ago
It is often the case, that an Engineer is required to simulate environmental effects on a device manufactured by a third party. In such an event, the first issue that
9 years ago
In recent years, radio-frequency (RF) CMOS on Silicon-on-Insulator (SOI) has rapidly evolved as a mainstream technology for switches used in wireless applications such as tuners and power amplifiers [1, 2].