Simulation Standard

Abstract— A complete simulation flow for a Nanowire-based ring oscillator circuit is presented, where the active devices were simulated using an atomistic device simulator. The results of this simulation have

Abstract—There are several device challenges unique to the select gate transistor in 3D NAND memory cell. It requires low leakage current to prevent read and program disturb problems and it

In this paper, in order to understand trap-rich substrate behavior, passive and active device on SOI with trap-rich layer structures were simulated using the Victory Device simulator. Harmonics distortion of

Introduction Diamond is considered to be the ultimate semiconductor material for high power and high frequency devices due to its superior electrical and thermal properties, such as high breakdown field,

Introduction Gallium nitride (GaN)-based devices are excellent candidates for high-voltage and high-power applications, due to the superior physical properties of GaN compared to Si, SiC, and GaAs. Recently, GaN vertical

Introduction Amorphous In-Ga-Zn-O thin-film transistors (a-IGZO TFTs) show a high mobility, a small sub-threshold swing, and a low OFF-current, and they are considered to be one of the most promising

Abstract — Dual junction solar cells were simulated using Silvaco TCAD tool with various tunnel junction material compositions. InGaP/GaAs dual junction solar cells were simulated with 10 different tunnel junction

Q. Is it possible to emulate a deep reactive ion etch process (e.g. deep trench with scalloped sidewalls) without using a physical based process simulation, such as Victory Process? To

2019 baseline release of Victory Process includes improvements and extensions to the following modules: Physical etching/deposition Stress simulation Annealing/oxidation

The 2019 TCAD baseline release of Victory Mesh now contains Solid Modeling functionality. The term Solid Modeling is used to refer to a methodology that generates or manipulates a device