Simulation Standard

Gallium Nitride (GaN) based devices such as the High Electron Mobility Transistors (HEMTs) find wide applications in RF and Power domain due to its excellent intrinsic properties. Accordingly, such devices

In this paper the critical design features of a SiC superjunction trench MOS device were optimized using CAD to obtain a high breakdown voltage while minimizing any unnecessary increase in

Conductive Bridge Random Access Memory (CBRAM) is a non-volatile memory device technology that can operate by consuming very low power. Another advantage of the CBRAM devices is its ability to

The qualification of GaN power high-electron-mobilitytransistors (HEMTs) must consider the device ruggedness against out-of-SOA (safe operating area) events [1- 3].

Dry etching is commonly used in semiconductor processing to generate deep trenches with good anisotropy. Dry etching is applied to many semiconductor technologies including Advanced FinFETs, 3D NAND, and vertical

2020 TCAD Baseline Release Section 1: Process Simulation – New Features in 2020 Baseline Release

2020 TCAD Baseline Release Section 2: Meshing – New Features in 2020 Baseline Release

2020 TCAD Baseline Release Section 3: Device Simulation – New Features in 2020 Baseline Release

Silvaco TCAD has been used by Tier 1 power device manufactures and designers for decades. The introduction of Victory Process, Victory Mesh, and Victory Device significantly increases the functionality and

It is crucial for any kind of calculations that units are consistent between equations and modeling modules. Often different units are used in various experimental and theoretical fields. Therefore, we

Victory Mesh initially supported loading and remeshing of the saved status from Victory Process. Victory Mesh 1.5.0 onwards is now able to load and remesh individual structure files (.str files),