Simulation Standard

DeckBuild is Silvaco’s state of the art simulator interface. It is capable of running all simulators from Silvaco as well as many of the visualization tools. Figure 4-1 shows an

Introduction Low-temperature polycrystalline silicon (LTPS) thin-film transistors have been widely applied to AMOLED (Active Matrix Organic Light Emitting Diode) as the most suit­able means for high mobility, high switching speed

Introduction With the recently launched Radiant, a graphical user interface (GUI) for Atlas-based TCAD simulations, the entry barrier for inexperienced users has been lowered. In particular, the use of guided

Organic thin-film transistors (OTFTs) are promising devices for future low-cost electronics[1][2]. However, to enable the development of this technology, circuit design simulation is needed. TCAD with MixedMode approach provides a

Introduction In this article we will emphasize two new features of the DeckBuild deck editing environment. These are the movie creation on the one hand and the creation of PDF

As process nodes continue to shrink, the requirement for additional physics is gradually creeping into each stage of the design process. By way of illustration, TCAD simulations are becoming more

The previously standalone Stellar GUI based field solver tool for parasitic extraction is now integrated into Hipex (Silvaco’s full chip extraction tool) in Expert GUI. In Hipex, user can choose

We have demonstrated in previous articles the static electrical and optical simulation of LC cells [1][2]. The last piece of the function for a comprehensive analysis of an LC pixel

OBJECTIVE Add an impurity (H) to a material (silicon) for a diffusion model (Fermi). The description below refers to Victory Process version 7.27.X.

One of wide bandgap semiconductors, SiC has been widely applied to the power devices, and then, the super-junction MOS transistor of SiC is being investigated to obtain higher performance for

Previously published fast empirical models for diffusion coefficients in silicon-germanium (Si1-x Gex) [1][2] were not applicable to high germanium content x≥0.5 and hence did not properly extend towards germanium. For

Gallium nitride (GaN)-based devices for power electronics show superior performance in comparison to silicon carbide and silicon-based devices [1]–[3]. The development of vertical devices, like pn-diodes and power HEMTs results