Casey Molver

Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster. 

28 years ago

This article focuses on the effects of process and modeling parameters on device electrical characteristics and uses the threshold voltage versus gate length of a n-MOSFET as an illustration.

28 years ago

Mixed-signal systems-on-a-chip (SOC) integration of digital, analog, RF, and power components is emerging to meet demands for low-power, highly integrated systems in portable computing, wireless communications, and multimedia.

28 years ago

FastBlaze is a fast physical device simulator for MESFETs and HEMTs optimized to provide interactive TCAD for modern III-V FET devices. It incorporates device-specific techniques to allow 1000x to 10000x

29 years ago

Q. What is the typical method of measuring flicker noise using S3245A Noise Amplifier?

29 years ago

The importance of the MOS device SPICE model validation and the introduction of the validation routine in UTMOST III was presented in Simulation Standard article issued on September 1996. The

29 years ago

A new feature has recently been added to UTMOST: the ability to convert UTMOST log files into a format suitable for viewing in TonyPlot. This new feature is controlled from

29 years ago

In a previous article [1], the efficient use of the SmartSpice .MODIF statement for cell characterization was discussed. This article will focus on using advanced features of the SmartSpice scripting

29 years ago

Thin film transistors (TFTs) have an important application in the manufacture of active matrix LCD displays. As this technology has become more mature, a number of different models of both

29 years ago

The SmartSpice Interface to Cadence integrates the Analog Artist and Composer elements of the Cadence Design Framework II (DFII) with SmartSpice. This integration is accomplished, in versions 4.4.0 and later

29 years ago

Ring oscillator circuits are a valuable test structure for determining the feasibility and success of an integrated circuit process fabrication sequence. One of the most useful results obtainable from a

29 years ago

The Berkeley BSIM3SOI model, released in December 1997, is now available within SmartSpice as the MOSFET level=25 model. This model incorporates three separate implementations: the original Berkeley model implementation is

29 years ago

The paper describes a generalization of the scanline approach [1] to reconstruction of the shape of planar object represented by a discrete point set with a given distance threshold d.