Calibrating Reverse Short Channel Effects in MOSFETs


This article focuses on the effects of process and modeling parameters on device electrical characteristics and uses the threshold voltage versus gate length of a n-MOSFET as an illustration. It has long been the adage of experienced TCAD users that the correct modeling of the process flow should represent approximately 90% of the effort, the remaining effort being directed towards electrical device modeling. In other words, if the process flow is correctly modeled, the basic electrical characteristics will be largely correct. This truism is based on the fact that device physics is well understood and most values required for device modeling are well known for silicon. These device modeling parameters are included as the default values in ATLAS.