Simulation Standard

A. It is likely that there may be some contact problems or defected devices during the data collection. This problem can occur when the log file is open and some

New improvements have been added to Shur models. These enhancements include a self-heating effect and a new charge conservative model.

The Berkeley BSIM3SOI version 2.1 models, released in September 1999, have been implemented in SmartSpice. The three new models are selected according to LEVEL selector.

Q: How can I cut exactly the same hole in many layers? A: There are at least two ways to do this. (1) You may use the command Tools>>Cut by

One of the main features of modern complex CAD systems consists in the ability to support the schematic capture function that provides a user with convenient design entry. In our

A: Modeling of the increase in breakdown voltage at elevated temperatures requires a model to describe the temperature dependence of the impact ionization coefficients. In ATLAS there are two impact

The recent advances in PC hardware capability in terms of memory and CPU floating point performance has allowed the possibility of running realistic sized ATHENA and ATLAS problems on PCs.

In order to simulate heterojunction devices accurately, both the thermionic emission and tunneling mechanisms must be considered when calculating transport across hetrojunctions. Drift-diffusion descriptions of carrier mobility are incomplete at

EXACT is a sophisticated interconnect characterization tool integrated into the DISCOVERY framework. It is designed to build the capacitance coefficient database required by any Layout Parasitic Extraction (LPE) tool. To

The "Binning" routine in UTMOST III MOS module has been greatly enhanced. The bin models can be generated much faster and the routine requires less user interface.