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Simulation Standard
Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.
26 years ago
Hints, Tips, and Solutions June 2000
Q: To simplify netlist extraction, I specify one kind of diffusion resistors in my layout by means of a special resistor definition layer. To my surprise, the extracted value for
26 years ago
Parametric-Cells Implementation in Expert
A parameterized cell (P-Cell) is a cell with user-specified parameters. It is possible to create customized p-cell instances with different composition according to parameter values. Using P-Cells gives a considerable
26 years ago
Dragon DRC: Performance Improvement Techniques
Dragon DRC is a new advanced hierarchical DRC system. The design principles this system is based on are carefully selected to ensure that Dragon DRC will deliver maximum performance in
26 years ago
Maverick and Guardian – Enhancements
The latest release of Layout versus Schematic tools from CELEBRITY CAD suite (Maverick full-chip parametric netlist extractor and Guardian hierarchical netlist comparator) delivers a number of significant advances. The engines
26 years ago
Design Version Control System for Expert
The DVCS subsystem of CELEBRITY CAD suite provides significant improvement in management of complex designs, design reuse and teamwork management. The most important features of DVCS are the means for
26 years ago
Hints, Tips, and Solutions February 2000
Q. When I simulate my process flow the simulated profile is always lower than the SRP measurements. What could be causing this? A. In many simulated process flows the surface
26 years ago
Using Luminous to Model the Transient Response of a Silicon Charge Collection and Transfer Structure
The rapid evolution of modern photonic devices in digital photographic and detection systems creates a need for physically-based simulation of charge collection and transfer. In this article we show the
26 years ago
Calibrated and Predictive Simulation of Doping Profiles: Low Energy As, B and BF2 Ion Implantation
This article will present an efficient and original methodology for global and predictive modeling of low energy Boron, BF2 and Arsenic ion implantation, in the suitable range for sub-100nm CMOS
26 years ago
QUEST – Extraction of Frequency Dependent R, L, C, and G Transmission Line Models
A primary use of QUEST is intended to be for extracting frequency dependent transmission line models for use in SPICE circuit simulations. The generation of SPICE parameters for transmission line
26 years ago
Hints, Tips, and Solutions April 2000
Q. How can I extract VBIC bipolar model parameters using UTMOST III? A. UTMOST III Bipolar module can be utilized to extract and optimize the VBIC model parameters for bipolar