Simulation Standard

Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.

24 years ago

HiSIM Version 1.0 Model Released in UTMOST III

HiSIM is a MOSFET model for SPICE circuit simulation that has been developed by Hiroshima University and STARC Company. This model present several advantage on the extraction point of view,

24 years ago

Measure Low Current FT in Bipolar devices

The input impedence of most network analyzers are around 1 MOhm, which is relatively small. Due to this low impedence the leakage current on the Base port (Typically Port1) becames

24 years ago

Parallel DRC by Functional Decomposition of DRC Decks

A new version of Savage DRC system taps the full power of multiprocessor computers by introducing simultaneous execution of DRC commands from a DRC deck. A DRC deck is a

24 years ago

Expert Layout Editor, Savage DRC System and Guardian LVS for Linux Platform

Silvaco Data Systems announces the release of CELEBRITY CAD suite: Expert layout editor, Savage DRC system and Guardian LVS for Linux platform.

24 years ago

Modification of BEM for Precise Capacitance Extraction

It is well-known that parasitic effects are no longer negligible for modern integrated circuit technology. Among the most important parasitic effects limiting the chip performance are interconnect related problems like

24 years ago

Advanced Layout Editing Using XI-scripts

To provide uniform etching of metal, dummy metal rectangles can be placed over an unused area of the chip. The following script generates dummy layer with a full array of

24 years ago

Hints, Tips, and Solutions for Expert Layout Editor

Q: How can I cut exactly the same hole in many layers? Q: How to skip a single layer during stream-out? Q: How to do filler boxes in Expert?

24 years ago

A Model for Boron T.E.D. in Silicon: Full Couplings of Dopant with Free and Clustered Interstitials

In this contribution we present a model for transient enhanced diffusion of boron in silicon. This model is based on the usual pair diffusion mechanism including non-equilibrium reactions between the

24 years ago

Breakdown Analysis of a Body-Contacted Submicron High Electron Mobility Transistor

Interest continues to grow in the development of high electron mobility transistor (HEMT) technologies for micrometer and millimeter wave power applications. A primary concern of device designers working with such

24 years ago

QUEST: Frequency-Dependent RLCG Extractor Part 2 – Comparison with Experiments

This article presents a standard case of transmission line: the microstrip structure. First, the structure is described and then the results extracted from QUEST are compared with measurements. We thank