This author has written 628 articles

Gigi Boss

Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.

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5 years ago

Relating Platinum Diffusion to Minority Carrier Lifetime Control in PiN Diode: Coupled TCAD Process and Device Simulation

Platinum and gold are widely used as an effective method to control lifetime in silicon-based devices [1, 2, 3]. Platinum and gold are introduced as recombination centers to improve switching

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5 years ago

How to Use Device Simulation as a Tool for Understanding GaN HEMTs

February 24, 2022 | 10:00 am – 10:30 am (PST) This webinar will illustrate through specific published examples of how TCAD device simulation of GaN based devices can be a

5 years ago

How to Improve Physical Verification Productivity with SmartDRC/LVS

February 17, 2022 | 10:00 am – 10:30 am (PST) Physical Verification is the most critical stage of microchip design. This webinar introduces SmartDRC/LVS as a highly productive tool to

5 years ago

Enabling the Rapid Development of SiC Superjunction-MOSFETs in Collaboration with mi2-factory

Introduction Super-junction based devices are a key enabling technology for power devices. Adjacent columns of p and n-type doped material with optimized doping levels enables box-like electric fields, maximizing the

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5 years ago

Colin Shaw of Silvaco Named Si2 Pinnacle Award Winner

December 12, 2021

5 years ago

TCAD Modeling of Amorphous Selenium-based Avalanche Photon Detectors

Abstract— Silvaco TCAD simulations are employed to identify relevant current carrying mechanisms in amorphous selenium (a-Se) based detectors, using parameters obtained from experimental data, density functional theory calculations, and in-house

5 years ago

Strategic Account Manager

Location: Seattle/Bellevue, WA - Boston, MA - Phoenix/San Diego, CA As a Strategic Account Manager at Silvaco, you will be responsible for generating new business for our full line of

5 years ago

Singular Point Source MOS Cell Concept (S-MOS) Implemented on a Narrow Mesa Trench IGBT

Abstract— A Singular Point Source MOS (S-MOS) cell concept suitable for power MOS based devices is presented. The S-MOS differs from a standard Planar or Trench MOS cell in the

5 years ago

Singular Point Source MOS Cell Concept (S-MOS) Implemented on a Narrow Mesa Trench IGBT

Abstract— A Singular Point Source MOS (S-MOS) cell concept suitable for power MOS based devices is presented. The S-MOS differs from a standard Planar or Trench MOS cell in the

5 years ago

A Comprehensive Oxide-Based ReRAM TCAD Model with Experimental Verification

Abstract—During the last few years, oxide-based ReRAM technology has attracted intense industrial and scientific research interest. Therefore, we have performed an in-depth computational study with a focus on data retention