Predictive TCAD Modeling of Normally-Off p-GaN HEMTs for Dynamic RDS(on), Leakage, Breakdown, and ML-Based Design Exploration
This article presents a practical simulation workflow for predictive simulation of normally-off p-GaN high-electron-mobility transistors (HEMTs), with emphasis on device-physics calibration, leakage modeling, dynamic RDS(on), breakdown behavior, and machine-learning-assisted design exploration.