Entries by Gigi Boss

IGBT Switching Simulation Based on the Double-Pulse Method

This article introduces a DPT-based simulation method to perform the transient switching characteristics of an IGBT device. It also provides standard templates for power device switching characteristics and performance assessment using Silvaco TCAD simulation tools. The deck used for this article can be found in Silicon_Power_ex17 of the 2024 Baseline.

2024 TCAD Baseline Release

  • Section 1: Process Simulation – New Features in 2024 Baseline Release
  • Section 2: Device Simulation – New Features in 2024 Baseline Release
  • Section 3: Victory DoE – New Features in 2024 Baseline Release

Applying Artificial Intelligence in Fab Technology Co-Optimization (FTCOTM)

July 25, 2024
The common approach to optimize a fabrication process involves process and fab engineers creating and setting up Design of Experiments (DoEs) using a trial-and-error approach. This approach often leads to costly iterations since wafer fabrication is both expensive and time-consuming. The new approach described in this webinar, already in production use today, leverages artificial intelligence (AI) and machine learning (ML) to generate an accurate model of a fabrication step.