Entries by Gigi Boss
Setting up the Wafer Orientation: Applications to Ion Implantation
Properly setting the wafer orientation in Victory Process (VP) is critical for various processes such as ion implantation, etching, and deposition. For ion implantation in particular, the determination of the wafer orientation becomes crucial, given its profound impact on profile variations in channeling and non-channeling directions.
Optoelectronic Component Design for Photonic Integrated Circuits
Photonic integrated circuits (PICs) are a key enabling technology for a broad range of current and next-generation products. Combining semiconductor materials and manufacturing processes common to microelectronics with the encoding, transmission and detection of light, PICs are transforming communication in datacenters by bringing bandwidth closer to compute cores, and are accelerating emerging applications like LiDAR for autonomy and quantum computing for the future of information processing.
Learn How STMicroelectronics Silicon Carbide (SiC) Research Team uses Silvaco TCAD to Analyze the Impact of Surface Defect Dot on Short Circuit Phenomena in SiC Devices
March 28, 2024
During SiC device switching operations, it is possible that devices could be reaching abnormal overload conditions, which is why some applications require “robustness” specifications (e.g., Short Circuit and UIS tests). In this webinar we will show how the impact of a short circuit of a defect localized in the active area has been investigated by means of TCAD simulations performed with Silvaco software.
Advanced TCAD Modeling of HfO2-based ReRAM: Coupling Redox Reactions and Thermal Effects
This paper presents a TCAD modeling approach for HfO2-based ReRAM (Resistive Random Access Memory). For describing the switching and retention behaviors of a ReRAM cell, the proposed model includes the essential redox reactions coupled to an electron transport model and to heat generation. The effects of various parameters such as sweep time, and device geometry on the switching behavior are investigated. Simulation results demonstrate that thermal management is crucial both for the reliable operation of ReRAM cells and retention. The proposed TCAD model provides insight into the design and optimization of HfO2-based ReRAM devices.
GaN-based Power Devices Design and Development with Silvaco TCAD Solution
February 29, 2024
Physical-based simulation tools are essential for the development and insight to this new generation of wide bandgap electronic devices in FBH laboratories. In this webinar, we will give examples for the use of Silvaco TCAD simulation tools used to design, predict and analyze the electrical characterization of vertical and lateral GaN based power devices.
Power Devices SPICE Modeling for Si, GaN and SiC Technologies
February 08, 2024
We will analyze various approaches to the SPICE modeling of Power devices, including compact models and macromodels.