엔트리 Gigi Boss
Predictive TCAD Modeling of Normally-Off p-GaN HEMTs for Dynamic RDS(on), Leakage, Breakdown, and ML-Based Design Exploration
This article presents a practical simulation workflow for predictive simulation of normally-off p-GaN high-electron-mobility transistors (HEMTs), with emphasis on device-physics calibration, leakage modeling, dynamic RDS(on), breakdown behavior, and machine-learning-assisted design exploration.
Silvaco Reports Second Quarter 2026 Financial Results
August 6, 2026
AI-Powered Surrogates: From Process Geometry to I‑V Curves
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Accelerating Manufacturing-Aware Simulations for Photonic Integrated Circuits with FTCO™ and Digital Twins
In this article we show a Fab Technology Co-Optimization (FTCO) workflow that connects GDS layout import, three-dimensional process simulation, GPU-accelerated FDTD, design of experiments (DOE), with AI-based surrogate modeling.