엔트리 Gigi Boss

IGBT Switching Simulation Based on the Double-Pulse Method

This article introduces a DPT-based simulation method to perform the transient switching characteristics of an IGBT device. It also provides standard templates for power device switching characteristics and performance assessment using Silvaco TCAD simulation tools. The deck used for this article can be found in Silicon_Power_ex17 of the 2024 Baseline.

2024 TCAD Baseline Release

  • Section 1: Process Simulation – New Features in 2024 Baseline Release
  • Section 2: Device Simulation – New Features in 2024 Baseline Release
  • Section 3: Victory DoE – New Features in 2024 Baseline Release

How Can I Re-Use Individual Monte-Carlo 3D Implant Profiles?

It is often the case that a design of experiments (DOE) is required to optimize the performance of a particular device.  Sometimes this simply means tweaking the implant dose for threshold voltage or other minor adjustments, but in other cases it can mean tweaking such things as high energy deep well implants.