This paper presents a TCAD modeling approach for HfO2-based ReRAM (Resistive Random Access Memory). For describing the switching and retention behaviors of a ReRAM cell, the proposed model includes the essential redox reactions coupled to an electron transport model and to heat generation. The effects of various parameters such as sweep time, and device geometry on the switching behavior are investigated. Simulation results demonstrate that thermal management is crucial both for the reliable operation of ReRAM cells and retention. The proposed TCAD model provides insight into the design and optimization of HfO2-based ReRAM devices.

Numerical Algorithm to Perform Viscoelastic Analysis

Viscous materials exhibit both viscous and elastic characteristics when undergoing deformation. The response of such materials to force is characterized by two distinct phases. The materials first deform instantaneously akin to elastic materials. Following on, the material continues to deform at a relatively slower time scale. Typically, materials undergoing thermal treatment exhibit viscoelastic properties.