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Simulation Standard

A Journal for Process and Device Engineers


2021 TCAD Baseline Release

New Features in 2021 Baseline Release: Section 1: Process Simulation Section 2: Device Simulation Section 3: Victory Mesh Section 4: Parasitic Extraction

An Introduction to Meshing in Victory Process

Victory Process (VP) uses two types of mesh to represent the structure: • The geometry mesh, which is used to represent the material regions. • The volume mesh, which is used to represent the volume data (doping etc).

Compact Multi-Level Digital-to-Analog Conversion Using Thin-Film Multimodal Transistors

Unlike conventional ohmic contact thin-film transistors (TFTs), contact-controlled TFTs [1], [2] rely on source energy barriers to produce a range of benefits including: low saturation voltages; extremely high intrinsic gain; power-efficiency; electrical stability; and uniformity of operation, notably with imprecise processes [3]. Generally, these benefits come at the expense of transconductance, however in materials such as polysilicon, similar levels of on-current can be obtained in a more compact footprint without any trace of kink-effect [4], [5].

Investigation and Explanation of PiPiN Avalanche Photo-Diode Characteristics

In this article, the operation of avalanche photo-diodes in the medium gain, continuous operation mode is investigated. In other words, we are not considering diode operation in transient “Gieger” or “single photon” detection mode, but rather in a region safely below secondary breakdown, where a well-designed avalanche photo diode can exhibit a moderate photo-generated current multiplication factor of an order of magnitude or higher.

How do I create complex shapes with fixed cross sections in Victory Mesh?

Victory Mesh versions 1.7.2.C and later include two new commands that can be used for complex shape genera-tion. The path and follow commands can be used together to generate surface meshes of general shapes based on fixed cross sections.PathThe path command connects a sequence of vertices via edges. The command operates in line or Bezier modes. In the line mode the from/to parameters are used to define the start and end of an n-dimensional line segment, for example:

Parabolic Grading of a PHEMT Channel Composition for Ultra-High and Broad OIP3 Peak

We detect a local maximum in the design space of a pseudomorphic-channel high electron mobility transistor (PHEMT). The design has an OIP3  linearity figure-of-merit that is 10-15 dBm above the baseline for a similar 1 mm width control device, and is achieved at a gate bias on the order of 100 mA/mm or less, where the ratio of transconductance to the bias current gm1/ID is particularly large (7 volt-1).