8 years ago
As process nodes continue to shrink, the requirement for additional physics is gradually creeping into each stage of the design process. By way of illustration, TCAD simulations are becoming more
8 years ago
The previously standalone Stellar GUI based field solver tool for parasitic extraction is now integrated into Hipex (Silvaco’s full chip extraction tool) in Expert GUI. In Hipex, user can choose
8 years ago
We have demonstrated in previous articles the static electrical and optical simulation of LC cells [1][2]. The last piece of the function for a comprehensive analysis of an LC pixel
8 years ago
OBJECTIVE Add an impurity (H) to a material (silicon) for a diffusion model (Fermi). The description below refers to Victory Process version 7.27.X.
8 years ago
With each new semiconductor process node, process variation, both global and local, play an increasingly significant role in determining Memory performance. When combined with supply voltage and temperature variation, traditional
8 years ago
This webinar will provide a discussion about new features of Silvaco’s Layout Editor tool (Expert) for improving design productivity on FPD layout.
8 years ago
This webinar will present a model parameter extraction methodology for GaN HEMT devices. This will include a review of the current SPICE compact models for GaN HEMT devices, with a
8 years ago
This webinar will present an efficient methodology for migrating and optimizing standard cell libraries. Foundation IP reuse through migration between non-disruptive technology nodes can save a lot of engineering resources
8 years ago
One of wide bandgap semiconductors, SiC has been widely applied to the power devices, and then, the super-junction MOS transistor of SiC is being investigated to obtain higher performance for
8 years ago
Previously published fast empirical models for diffusion coefficients in silicon-germanium (Si1-x Gex) [1][2] were not applicable to high germanium content x≥0.5 and hence did not properly extend towards germanium. For
8 years ago
Gallium nitride (GaN)-based devices for power electronics show superior performance in comparison to silicon carbide and silicon-based devices [1]–[3]. The development of vertical devices, like pn-diodes and power HEMTs results
8 years ago
This document describes how to setup a virtual environment suitable for the deckbuild remote mode. The host system to consider shall be Windows (7 or 10). The goal is to