2 years ago
- 第一部分:Victory Process——2024基准版本中的新功能
- 第二部分:Victory Device——2024基准版本中的新功能
- 第三部分:Victory DoE——2024基准版本中的新功能
2 years ago
2024年7月25日 FTCO基于实际生产工艺中的物理和化学机制,利用人工智能(AI)和机器学习(ML)生成精确的TCAD数字模型(数字孪生)。对于这种数字孪生模型,可以采用DoE方法进行测试和分析,而无需真实流片,从而大大节省了制造相关的时间和费用。
June 12, 2024
2 years ago
It is often the case that a design of experiments (DOE) is required to optimize the performance of a particular device. Sometimes this simply means tweaking the implant dose for
2 years ago
Recently a new diffusion model was introduced to Victory Process: the CMOS model. This model aims at taking on the challenges brought by the specificities of CMOS device processing such
2 years ago
May 8, 2024
3 years ago
April 30, 2024
3 years ago
Properly setting the wafer orientation in Victory Process (VP) is critical for various processes such as ion implantation, etching, and deposition. For ion implantation in particular, the determination of the