Yearly Archives: 2022
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2022
Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.
4 years ago
3D TCAD Simulation of Gallium Nitride Tri-gate Junction HEMT
The GaN high electron mobility transistor (HEMT) has been commercialized as a power device with performance superior to Si devices in the voltage classes from 15 V to 900 V
4 years ago
Silvaco Announces Appointment of Five Industry Veterans to Its Board of Directors
November 8, 2022
4 years ago
Writing an Impurity Activation Model with the Open Model Library
Accuracy of Impurity Activation is essential in correctly modeling and simulating Silicon Carbide devices. For high concentrations of dopants, it is well known that less than 100% of dopants will
4 years ago
SURGE EMEA 2022
SURGE Virtual Event EMEA 2022 SURGE brings the TCAD, EDA, and IP communities together to discuss new technologies, share users’ experiences, and discover innovative techniques for advanced semiconductor design. Agenda
4 years ago
SURGE Taiwan 2022
SURGE Virtual Event Taiwan 2022 Silvaco held its annual SURGE users event on November 9, 2022. You may view the event in the archive below. SURGE brings the TCAD, EDA,
4 years ago
User Probes and Arbitrary Parameter Sweeps in Victory Device
One of the new features in Victory Device is the ability to add user managed parameters to a log file. This can be used when sweeping parameters (manually or in
4 years ago
Learn About Victory Visual, Silvaco’s New Graphical Visualization Solution for TCAD
September 22, 2022 In this webinar we will introduce Victory Visual, a new graphical post-processing tool for use with all Silvaco TCAD simulators and an integral part of
4 years ago
Quantum Transport Simulation at Atomistic Accuracy of a Nanowire FET
The FET physical dimensions continue to shrink to five nm node and below, characterized by new types of architectures with nanosheet (NS) and nanowire (NW) shapes [3]. The present choice
4 years ago
Learn How Victory Atomistic TCAD Solution Can Help You Succeed at Prototyping Atomistic Nanoscale Devices
September 8, 2022 In this webinar, we present how ultra-scaled Field-Effect Transistor (FET) technology requires simulations at the atomic scale for designing the most advanced technological architectures at 5 nm
4 years ago
2022 TCAD Baseline Release
New Features in the 2022 Baseline Release:
- Section 1: Process Simulation – New Features in 2022 Baseline Release
- Section 2: Device Simulation – New Features in 2022 Baseline Release