Simulation Standard

Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.

23 years ago

Design of Optimal Spiral Inductors in Expert

Introduction One of the key components in many RF ICs applications is the inductor. It is very important that the inductor has optimal design, meaning optimal geometry with the best

23 years ago

When I do an extract, the generated layers are present in the layout.

Q: When I do an extract, the generated layers are present in the layout. If I need to do layout modifications I find it very cumbersome to deal with the

23 years ago

Resistance Calculation Approach in Hipex-NET

Hipex-NET uses two techniques to calculate resistor values. First method of resistance extraction, which is usual for full chip netlist extractors and uses heuristic algorithms to recognize common shapes for

23 years ago

TCAD Simulation of a Dual Band Monolithic HgCdTe Infrared Photodetector

Introduction Mercury cadmium telluride (HgCdTe) is a semiconductor material whose material properties are adjustable through altering its constitutive molar fractions. HgCdTe has found extensive use in optical detection, and in

23 years ago

Mocasim – A Versatile Monte Carlo Simulator for III-Nitride Transport Properties

III-Nitrides have recently attracted attention as a promising material class for high-power, high-frequency microelectronic applications at elevated temperatures. They possess large band gaps, relatively small effective masses in the conduction

23 years ago

Schrödinger Approach and Density Gradient Model for Quantum Effects Modeling

We describe here two approaches to model the quantum effects that can no more be neglected in actual and future devices. These models are the Schrödinger-Poisson and Density-Gradient methods fully

23 years ago

How can I use the EXTRACT commands to find the depletion widths in my MOSFET at different drain biases?

To illustrate the use of this statement to find depletion widths we have used the standard MOSFET example mos1ex01.in to first create the structure. Then the drain voltage was swept

23 years ago

Instructional Approach to Writing Parasitic Capacitance Rules Files Using Exact

1. Introduction The Exact analysis stage extracts the user-required information necessary for the respective parasitic capacitances by probing the Exact database. This is performed via script files written in LISA

23 years ago

Simulation of Silica Microlenslet Formation by Etch and Reflow Using Elite and SSuprem4

Introduction In response to high demand, device designers are developing silica microlenslets that offer efficient coupling between optical fiber bundles and arrays of photodetectors, LEDs, or VCSELs. Microlenslet design involves

23 years ago

Remote ALTER processing

A new parallelization method has been implemented into SmartSpice. Now .ALTERs can be destributed not only over several CPUs (by using -P option), but over a network of computers as