Simulation Standard

Among the many design criteria for solar cells, the design of the top metal contact impacts the cell efficiency. The areal density of the top contact modifies the magnitude of

There is a constant demand to lower the on-state resistance of devices, improving their energy efficiency as well as increasing their current handling capabilities whilst maintaining the desired breakdown voltage.

Victory Process supports mesh generation for device simulation using many common algorithms. The primary two are conformal and delaunay. A simple process simulation followed by an export will result in

The photovoltaics (PV) market represents the fastest growing renewable energy technology, with a 35% annual growth rate, which is projected to be worth $150B by 2018.[1] The global cumulative installed

VWF allows a curve as target for optimization. This feature greatly benefits the users who need to calibrate TCAD simulation against measured curve such as SIMS. VWF offers multiple ways

This document is a short guide on the new and existing support for export cropping/slicing in Victory Process cell mode. The cropping operation is useful to extract a segment of

Background: Victory Process is packaged with a wide range of etch models. Victory Process also supports an “Open Modelling Interface” (OMI). The OMI enables users to develop their own models

Irradiation by energetic particles can degrade semiconductor device performance. The particles involved can be electrons, positrons, neutrons, protons, alpha particles, heavy ions, or high-energy photons. As they pass through a

A reversed biased PIN diode acts as a radiation event detector, sensing the occurrence of an ionizing radiation pulse, which is connected to a threshold detector, the resistor RThreshold, that

Two fundamental damage mechanisms take place when devices are exposed to particle fluences: ionization and lattice displacement or just displacement damage. Ionization has previously been addressed in other simulation standard