Simulation Standard

Introduction Super-junction based devices are a key enabling technology for power devices. Adjacent columns of p and n-type doped material with optimized doping levels enables box-like electric fields, maximizing the

Abstract— Silvaco TCAD simulations are employed to identify relevant current carrying mechanisms in amorphous selenium (a-Se) based detectors, using parameters obtained from experimental data, density functional theory calculations, and in-house

Abstract— A Singular Point Source MOS (S-MOS) cell concept suitable for power MOS based devices is presented. The S-MOS differs from a standard Planar or Trench MOS cell in the

Abstract— A Singular Point Source MOS (S-MOS) cell concept suitable for power MOS based devices is presented. The S-MOS differs from a standard Planar or Trench MOS cell in the

Abstract—During the last few years, oxide-based ReRAM technology has attracted intense industrial and scientific research interest. Therefore, we have performed an in-depth computational study with a focus on data retention

New Features in 2021 Baseline Release:

1. Section 1: Process Simulation
2. Section 2: Device Simulation
3. Section 3: Victory Mesh
4. Section 4: Parasitic Extraction

Victory Process (VP) uses two types of mesh to represent the structure: • The geometry mesh, which is used to represent the material regions. • The volume mesh, which is

Unlike conventional ohmic contact thin-film transistors (TFTs), contact-controlled TFTs [1], [2] rely on source energy barriers to produce a range of benefits including: low saturation voltages; extremely high intrinsic gain;

In this article, the operation of avalanche photo-diodes in the medium gain, continuous operation mode is investigated. In other words, we are not considering diode operation in transient “Gieger” or

Victory Mesh versions 1.7.2.C and later include two new commands that can be used for complex shape genera-tion. The path and follow commands can be used together to generate surface

We detect a local maximum in the design space of a pseudomorphic-channel high electron mobility transistor (PHEMT). The design has an OIP3 linearity figure-of-merit that is 10-15 dBm above the

Gallium Nitride (GaN) based devices such as the High Electron Mobility Transistors (HEMTs) find wide applications in RF and Power domain due to its excellent intrinsic properties. Accordingly, such devices