Simulation Standard

Victory Extract是Silvaco在2024基准版本软件中推出的一个新工具，它统一了几款软件中的提取工具（DeckBuild的extract、Victory Process的extract3d和Victory Mesh的extract3d），并引入了一些新的量测功能。

我们将在本期为您介绍一种基于DPT的仿真方法，来研究IGBT器件的瞬态开关特性。文章还提供了一套使用Silvaco TCAD仿真工具评估功率器件开关特的标准模板和方法，所用的仿真代码可参考2024基准版本的示例Silicon_Power_ex17。

• 第一部分：Victory Process——2024基准版本中的新功能
• 第二部分：Victory Device——2024基准版本中的新功能
• 第三部分：Victory DoE——2024基准版本中的新功能

It is often the case that a design of experiments (DOE) is required to optimize the performance of a particular device. Sometimes this simply means tweaking the implant dose for

Recently a new diffusion model was introduced to Victory Process: the CMOS model. This model aims at taking on the challenges brought by the specificities of CMOS device processing such

Properly setting the wafer orientation in Victory Process (VP) is critical for various processes such as ion implantation, etching, and deposition. For ion implantation in particular, the determination of the

Photonic integrated circuits (PICs) are a key enabling technology for a broad range of current and next-generation products. Combining semiconductor materials and manufacturing processes common to microelectronics with the encoding,

This paper presents a TCAD modeling approach for HfO2-based ReRAM (Resistive Random Access Memory). For describing the switching and retention behaviors of a ReRAM cell, the proposed model includes the

Numerical Algorithm to Perform Viscoelastic Analysis Viscous materials exhibit both viscous and elastic characteristics when undergoing deformation. The response of such materials to force is characterized by two distinct

New Features in the 2023 Baseline Release:

• Section 1: Process Simulation – New Features in 2023 Baseline Release
• Section 2: Device Simulation – New Features in 2023 Baseline Release

The past several years has seen a fast deployment of wide-bandgap power devices in fast chargers, electric vehicles, data centers and renewable energy processing. The performance of power devices is

It is common to run the process simulation for the part of a larger structure just to reduce the computation time. To account for the influence of parts of the