Casey Molver

The degradation of MOSFET devices having relatively thin oxide layers is generally accepted as being mainly associated with the depassivation of silicon dangling bonds at the Si/SiO2 interface. These dangling

Virtual Wafer Fab’s powerful range of optimizers are used to investigate and minimise the coupled switching losses of a TCAD IGBT and its clamping diode in a chopper circuit. It

VICTORY Process is a 3D process simulation tool which employs the LevelSet technique for manipulating and deforming structures. The structure’s geometry is stored implicitly on the hierarchy of regular (constant

The trap states at the interface of Silicon with Silicon Dioxide are usually divided conceptually into interface states and fixed oxide charges [1]. These trap states can cause the degradation

The Insulated Gate Bipolar Transistor (IGBT), is a power device that combines the high-power characteristics of bipolar transistors with the fast-switching and voltage-drive characteristics of MOSFETs. It is used in

Silicon as a photonic medium has unique advantages in telecommunication systems. It is transparent in the range of optical telecommunications wavelength (1.3 and 1.55 um) and has a high index

The problem of discretising the semiconductor drift-diffusion equations in the presence of a uniform magnetic field using the Box Method has previously been addressed in the literature. For the case

This article describes a model for Resonant Tunneling Diodes (RTDs) implemented within ATLAS framework. The model is based on a self-consistent solution of Poisson and Non-Equilibrium Green’s Function (NEGF) equations

Solar cells manufactured from wafers of crystalline or polycrystalline silicon are today the dominant technology in the commercial market. Solar cells based on thin film semiconductor are another technology with

The fully three-dimensional process simulator VICTORY PROCESS allows user to perform a wide range of manipulations of the structure’s geometry in order to obtain the device of the desired shape.

SOI MOSFETs can exhibit a kink in their Id/Vd curves, which is caused by impact ionization, floating potentials, and other effects. One way of suppressing this kink effect is to

Crosstalk is one of the main parameters that critically affect the resolution of detector arrays. It results in a reduction in image clarity, thus degrading system performance. There are two