Casey Molver

The formation of isolation trenches is one of the key process steps used in power device fabrication. Also the intensive scaling of modern semiconductor devices requires significant stress engineering to

The ion milling process is used extensively in the Hard Disc Drive industry, particularly in the manufacture of thin film magnetic heads. Ion milling is used to pattern many metal

GaN-based Hetero-Field Effect Transistors have been investigated in high power and high frequency electronics devices. However, such improved performance is still subject to influence of surface and buffer traps. The

This paper presents research efforts conducted at the IESUPM in the development of an accurate, physically-based solar cell model using the general-purpose ATLAS device simulator by Silvaco. Unlike solar cell

Introduction As MOS field-effect transistors are scaled down to a nanometer regime, quantum effects in both transverse and transport directions start playing a major role in determining device characteristics. In

Abstract The paper presents a new approach to three-dimensional semiconductor process simulation that overcomes the problem of moving boundaries and mesh generation. Contrary to using unstructured meshes, the approach makes

Introduction In recent years, the investigation of Organic Light Emitting Diodes (OLEDs) and photovoltaic devices based on small organic molecules and polymers has attracted significant interest due to their potential

1. Introduction Organic semiconductors have been incorporated in a wide range of devices, including organic thin-film transistors (OTFTs) and circuits, organic solar cells, organic non-volatile memories and organic light-emitting diodes

Abstract This paper is focused on the stability of n-channel laser-crystallized polysilicon thin-film transistors (TFTs) submitted to a hydrogenation process during the fabrication and with small grains dimension. With the

In this paper, the transient analysis of an AlGaN/GaN high-electron mobility transistor (HEMT) device is presented. Drain–current dispersion effects are investigated when gate or drain voltages are pulsed. Gate-lag and

Introduction The trend toward ultra-short gate length MOSFET requires a more and more effective control of the channel by the gate leading to new architecture like double-gate, tri-gate, omega-gate, and

How Can I significantly Reduce Circuit Parasitics Netlist Extraction Time?