Casey Molver

Both flexible and touch panel displays have become popular for portable applications. To meet various functional requirements, system-on-panel (SOP) design has become essential [1] and different layouts as well as

In 1975, screen printing was first applied to solar cells for the formation of the front and rear contacts replacing expensive vacuum metallization [1]. The encapsulate used in a photovoltaic

Single-photon counting detectors are used in a wide range of applications, including astronomy, optical communications, biological sensors, and military uses. Photomultiplier tubes (PMTs) have fulfilled these needs in the past.

In this paper, a two dimensional (2-D) generic model of quantum well light emitting diode (LED) based on ZnO, II-VI compound semiconductors has been reported. The structure has been designed

To break through the material limits of Silicon and to realize the drastic performance improvement needed to meet the severe requirements in the future, wide bandgap semiconductors such as SiC

The analysis and characterization of stress effects have become an integral part of semiconductor technology and device design. In a typical semiconductor process flow the stresses are generated primarily due

OLEDs have been researched for application in display devices due to their considerable advantages. In order to further improve and optimize devices for practical applications, the electrical and optical parts

Since lighting is estimated to account for 20% of the world’s electricity consumption, the search for reliable and efficient lighting technologies to replace incandescent and fluorescent modules is intense.

The light source on short wavelenghts has been researched in GaN-based lser diodes (LDs). For high efficiency emitting devices, the wave-guide layer has been investigated to obtain more stable far

The addition of a chlorine species during thermal oxidation of silicon results in improved threshold stability, higher and more uniform oxide dielectric strength and improved junction properties due to lower

GaN heterojunction field effect transistors (HFETs) have been under extensive investigation because of their projected superb performances as high-power RF devices. The inherently high breakdown field arising from the wide

VICTORY Process is a tool for 3D simulation of the semiconductor industry’s technological processes. It allows stable and accurate modeling of the changes in a structure’s 3D geometry within etching