2024年3月28日 在打开和关闭SiC器件时，器件容易出现异常过载，因此在一些应用中对器件“鲁棒性”有要求，例如需进行短路测试和UIS测试。在本次研讨会中，来自意法半导体的研发人员将为大家介绍如何使用Silvaco TCAD软件对SiC器件短路现象进行研究。
This paper presents a TCAD modeling approach for HfO2-based ReRAM (Resistive Random Access Memory). For describing the switching and retention behaviors of a ReRAM cell, the proposed model includes the
February 8, 2024
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