3 years ago
March 28, 2024 During SiC device switching operations, it is possible that devices could be reaching abnormal overload conditions, which is why some applications require “robustness” specifications (e.g.,
3 years ago
This paper presents a TCAD modeling approach for HfO2-based ReRAM (Resistive Random Access Memory). For describing the switching and retention behaviors of a ReRAM cell, the proposed model includes the
3 years ago
February 8, 2024