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January 4, 2021

Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.

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6 years ago

TCAD Investigation of Total Ionizing Dose (TID) Effects on Gallium Nitride HEMTs

Gallium Nitride (GaN) based devices such as the High Electron Mobility Transistors (HEMTs) find wide applications in RF and Power domain due to its excellent intrinsic properties. Accordingly, such devices