Home > Search Results For

March 26, 2019

Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.

TCAD-based Model Extraction Flow for GaN HEMT Devices – Part 2

TCAD-based Model Extraction Flow for GaN HEMT Devices – Part 2 This webinar represents a continuation of a previously presented parameter extraction methodology for GaN HEMT devices. This will include