8 years ago
This webinar represents a continuation of a previously presented parameter extraction methodology for GaN HEMT devices. This will include generating I-V and C-V data through TCAD device simulations. Asymmetric vs.
This webinar represents a continuation of a previously presented parameter extraction methodology for GaN HEMT devices. This will include generating I-V and C-V data through TCAD device simulations. Asymmetric vs.
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